Formation and evolution of multimodal size distributions of InAs/GaAs quantum dots
Identifieur interne : 000318 ( Russie/Analysis ); précédent : 000317; suivant : 000319Formation and evolution of multimodal size distributions of InAs/GaAs quantum dots
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Abstract
Self-organized formation and evolution of quantum dot (QD) ensembles with a multimodal size distribution is reported. Such ensembles form after fast deposition near the critical thickness during a growth interruption (GRI) prior to cap layer growth and consist of pure InAs truncated pyramids with heights varying in steps of complete InAs monolayers, thereby creating well-distinguishable sub-ensembles. Ripening during GRI manifests itself by an increase of sub-ensembles of larger QDs at the expense of sub-ensembles of smaller ones, leaving the wetting layer unchanged. The dynamics of the multimodal QD size distribution is theoretically described using a kinetic approach. Starting from a broad distribution of flat QDs, a predominantly vertical growth is found due to strain-induced barriers for nucleation of a next atomic layer on different facets. QDs having initially a shorter base length attain a smaller height, accounting for the experimentally observed sub-ensemble structure. The evolution of the distribution is described by a master equation, which accounts for growth or dissolution of the QDs by mass exchange between the QDs and the adatom sea. The numerical solution is in good agreement with the measured dynamics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Formation and evolution of multimodal size distributions of InAs/GaAs quantum dots</title><author><name sortKey="Pohl, U W" uniqKey="Pohl U">U. W. Pohl</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Technische Universität Berlin, Institut für Festkörperphysik PN5-2, Hardenbergstr. 36</s1><s2>10623 Berlin</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author><author><name sortKey="Potschke, K" uniqKey="Potschke K">K. Pötschke</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Technische Universität Berlin, Institut für Festkörperphysik PN5-2, Hardenbergstr. 36</s1><s2>10623 Berlin</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author><author><name sortKey="Schliwa, A" uniqKey="Schliwa A">A. Schliwa</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Technische Universität Berlin, Institut für Festkörperphysik PN5-2, Hardenbergstr. 36</s1><s2>10623 Berlin</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author><author><name sortKey="Lifshits, M B" uniqKey="Lifshits M">M. B. Lifshits</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Technische Universität Berlin, Institut für Festkörperphysik PN5-2, Hardenbergstr. 36</s1><s2>10623 Berlin</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Abraham Ioffe Physical Technical Institute</s1><s2>St. Petersburg 194021</s2><s3>RUS</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>Abraham Ioffe Physical Technical Institute</wicri:noRegion></affiliation></author><author><name sortKey="Shchukin, V A" uniqKey="Shchukin V">V. A. Shchukin</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Technische Universität Berlin, Institut für Festkörperphysik PN5-2, Hardenbergstr. 36</s1><s2>10623 Berlin</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Abraham Ioffe Physical Technical Institute</s1><s2>St. Petersburg 194021</s2><s3>RUS</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>Abraham Ioffe Physical Technical Institute</wicri:noRegion></affiliation></author><author><name sortKey="Jesson, D E" uniqKey="Jesson D">D. E. Jesson</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>School of Physics, Monash University</s1><s2>Victoria 3800</s2><s3>AUS</s3><sZ>6 aut.</sZ></inist:fA14><country>Australie</country><wicri:noRegion>Victoria 3800</wicri:noRegion></affiliation></author><author><name sortKey="Bimberg, D" uniqKey="Bimberg D">D. Bimberg</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Technische Universität Berlin, Institut für Festkörperphysik PN5-2, Hardenbergstr. 36</s1><s2>10623 Berlin</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">06-0293149</idno><date when="2006">2006</date><idno type="stanalyst">PASCAL 06-0293149 INIST</idno><idno type="RBID">Pascal:06-0293149</idno><idno type="wicri:Area/Main/Corpus">008E34</idno><idno type="wicri:Area/Main/Repository">008C00</idno><idno type="wicri:Area/Russie/Extraction">000318</idno></publicationStmt><seriesStmt><idno type="ISSN">1386-9477</idno><title level="j" type="abbreviated">Physica ( E) low-dimens. syst. nanostrut.</title><title level="j" type="main">Physica. E, low-dimentional systems and nanostructures</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Adatoms</term><term>Digital simulation</term><term>Dimensions</term><term>Distribution functions</term><term>Faceting</term><term>Gallium arsenides</term><term>Growth mechanism</term><term>Indium arsenides</term><term>Kinetics</term><term>Master equations</term><term>Quantum dots</term><term>Self organization</term><term>Surface morphology</term><term>Thickness</term><term>Wetting</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Autoorganisation</term><term>Epaisseur</term><term>Mouillage</term><term>Cinétique</term><term>Facettage</term><term>Equation maîtresse</term><term>Adatome</term><term>Fonction distribution</term><term>Morphologie surface</term><term>Dimension</term><term>Simulation numérique</term><term>Mécanisme croissance</term><term>Indium arséniure</term><term>Gallium arséniure</term><term>Point quantique</term><term>InAs</term><term>GaAs</term><term>6865H</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Self-organized formation and evolution of quantum dot (QD) ensembles with a multimodal size distribution is reported. Such ensembles form after fast deposition near the critical thickness during a growth interruption (GRI) prior to cap layer growth and consist of pure InAs truncated pyramids with heights varying in steps of complete InAs monolayers, thereby creating well-distinguishable sub-ensembles. Ripening during GRI manifests itself by an increase of sub-ensembles of larger QDs at the expense of sub-ensembles of smaller ones, leaving the wetting layer unchanged. The dynamics of the multimodal QD size distribution is theoretically described using a kinetic approach. Starting from a broad distribution of flat QDs, a predominantly vertical growth is found due to strain-induced barriers for nucleation of a next atomic layer on different facets. QDs having initially a shorter base length attain a smaller height, accounting for the experimentally observed sub-ensemble structure. The evolution of the distribution is described by a master equation, which accounts for growth or dissolution of the QDs by mass exchange between the QDs and the adatom sea. The numerical solution is in good agreement with the measured dynamics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1386-9477</s0></fA01><fA03 i2="1"><s0>Physica ( E) low-dimens. syst. nanostrut.</s0></fA03><fA05><s2>32</s2></fA05><fA06><s2>1-2</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Formation and evolution of multimodal size distributions of InAs/GaAs quantum dots</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Proceedings of the 12th International Conference on Modulated Semiconductor Structures, MSS12, Albuquerque, NM, USA, 10-15 July 2005</s1></fA09><fA11 i1="01" i2="1"><s1>POHL (U. W.)</s1></fA11><fA11 i1="02" i2="1"><s1>PÖTSCHKE (K.)</s1></fA11><fA11 i1="03" i2="1"><s1>SCHLIWA (A.)</s1></fA11><fA11 i1="04" i2="1"><s1>LIFSHITS (M. B.)</s1></fA11><fA11 i1="05" i2="1"><s1>SHCHUKIN (V. A.)</s1></fA11><fA11 i1="06" i2="1"><s1>JESSON (D. E.)</s1></fA11><fA11 i1="07" i2="1"><s1>BIMBERG (D.)</s1></fA11><fA12 i1="01" i2="1"><s1>HU (Evelyn L.)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Technische Universität Berlin, Institut für Festkörperphysik PN5-2, Hardenbergstr. 36</s1><s2>10623 Berlin</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="02"><s1>Abraham Ioffe Physical Technical Institute</s1><s2>St. Petersburg 194021</s2><s3>RUS</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="03"><s1>School of Physics, Monash University</s1><s2>Victoria 3800</s2><s3>AUS</s3><sZ>6 aut.</sZ></fA14><fA15 i1="01"><s1>CNSI</s1><s2>Santa Barbara, CA 93106</s2><s3>USA</s3><sZ>1 aut.</sZ></fA15><fA20><s1>9-13</s1></fA20><fA21><s1>2006</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>145E</s2><s5>354000115502750030</s5></fA43><fA44><s0>0000</s0><s1>© 2006 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>9 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>06-0293149</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Physica. E, low-dimentional systems and nanostructures</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>Self-organized formation and evolution of quantum dot (QD) ensembles with a multimodal size distribution is reported. Such ensembles form after fast deposition near the critical thickness during a growth interruption (GRI) prior to cap layer growth and consist of pure InAs truncated pyramids with heights varying in steps of complete InAs monolayers, thereby creating well-distinguishable sub-ensembles. Ripening during GRI manifests itself by an increase of sub-ensembles of larger QDs at the expense of sub-ensembles of smaller ones, leaving the wetting layer unchanged. The dynamics of the multimodal QD size distribution is theoretically described using a kinetic approach. Starting from a broad distribution of flat QDs, a predominantly vertical growth is found due to strain-induced barriers for nucleation of a next atomic layer on different facets. QDs having initially a shorter base length attain a smaller height, accounting for the experimentally observed sub-ensemble structure. The evolution of the distribution is described by a master equation, which accounts for growth or dissolution of the QDs by mass exchange between the QDs and the adatom sea. 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